Raytheon’s New Program to Improve GaN Output Power by 16X for Future Systems
Microwave Journal Podcasts

Raytheon’s New Program to Improve GaN Output Power by 16X for Future Systems

2023-12-12

Pat Hindle talks with Matt Tyhach, Mission Area Director for Next Gen Sensors and Microelectronics in Advanced Technology at Raytheon, about recently awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors with 16X output power compared to traditional devices. This will enable future "smart" systems that can meet the needs for radar, EW and communications with one system.

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