Pat Hindle talks with Matt Tyhach, Mission Area Director for Next Gen Sensors and Microelectronics in Advanced Technology at Raytheon, about recently awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors with 16X output power compared to traditional devices. This will enable future "smart" systems that can meet the needs for radar, EW and communications with one system.