Raytheon’s New Program to Improve GaN Output Power by 16X for Future Systems

Pat Hindle talks with Matt Tyhach, Mission Area Director for Next Gen Sensors and Microelectronics in Advanced Technology at Raytheon, about recently awarded a four-year, $15 million contract from DARPA to increase the electronic capability of RF sensors with high-power-density GaN transistors with 16X output power compared to traditional devices. This will enable future "smart" systems that can meet the needs for radar, EW and communications with one system.